Part Number | TK14C65W5,S1Q(S2 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Toshiba |
Description | MOSFET N-CH 650V 13.7A I2PAK |
Series | DTMOSIV |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 650V |
Current - Continuous Drain (Id) @ 25°C | 13.7A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 4.5V @ 690µA |
Gate Charge (Qg) (Max) @ Vgs | 40nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1300pF @ 300V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 130W (Tc) |
Rds On (Max) @ Id, Vgs | 300 mOhm @ 6.9A, 10V |
Operating Temperature | 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | I2PAK |
Package / Case | TO-262-3 Long Leads, I²ÂPak, TO-262AA |
Image |
TK14C65W5,S1Q
TOSHBIA
1000
0.07
MY Group (Asia) Limited
TK14C65W5,S1Q(S2
TOSHI
10000
0.7275
Kinda Components Limited
TK14C65W
TOSIBA
1050
1.385
CIS Ltd (CHECK IC SOLUTION LIMITED)
TK14C65W,S1Q
TOSIHBA
18000
2.0425
MY Group (Asia) Limited
TK14C65W
TOSHIDA
6235
2.7
Dedicate Electronics (HK) Limited