Part Number | TK11A60D |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Toshiba |
Description | MOSFET N-CH 600V 11A TO-220SIS |
Series | 蟺-MOSVII |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25°C | 11A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 4V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | 28nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1550pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 45W (Tc) |
Rds On (Max) @ Id, Vgs | 650 mOhm @ 5.5A, 10V |
Operating Temperature | 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220SIS |
Package / Case | TO-220-3 Full Pack |
Image |
TK11A60D
TOSHBIA
9719
0.99
BOYU ELECTRONIC TECHNOLOGY LIMITED
TK11A60D
TOSHI
665
2.105
Yingxinyuan INT'L (Group) Limited
TK11A60D(STA4XM)
TOSIBA
3628
3.22
SUNTOP SEMICONDUCTOR CO., LIMITED
TK11A60D
TOSIHBA
9787
4.335
N&S Electronic Co., Limited
TK11A60D(STA4XS)
TOSHIDA
9903
5.45
CIS Ltd (CHECK IC SOLUTION LIMITED)