Part Number | TK10J80E,S1E(S |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Toshiba |
Description | MOSFET N-CH 800V TO-3PN |
Series | 蟺-MOSVIII |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 800V |
Current - Continuous Drain (Id) @ 25°C | 10A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 4V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | 46nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 2000pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 250W (Tc) |
Rds On (Max) @ Id, Vgs | 1 Ohm @ 5A, 10V |
Operating Temperature | 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-3P(N) |
Package / Case | TO-3P-3, SC-65-3 |
Image |
TK10J80E,S1E(S
TOSHBIA
7806
0.36
Aspr (ShenZhen) Technology Co.,Ltd
TK10J80E,S1E IC
TOSHI
9655
1.51
KDH SEMICONDUCTOR CO., LIMITED
TK10J80E,S1E
TOSIBA
6517
2.66
MY Group (Asia) Limited
TK10J80E,S1E(S
TOSIHBA
658
3.81
Longisland Tech Co., Ltd
TK10J80E,S1E
TOSHIDA
8978
4.96
Viassion Technology Co., Limited