Part Number | TK10A55D |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Toshiba |
Description | MOSFET N-CH 550V 10A TO-220SIS |
Series | 蟺-MOSVII |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 550V |
Current - Continuous Drain (Id) @ 25°C | 10A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 4V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | 24nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1200pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 45W (Tc) |
Rds On (Max) @ Id, Vgs | 720 mOhm @ 5A, 10V |
Operating Temperature | 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220SIS |
Package / Case | TO-220-3 Full Pack |
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TK10A55D
TOSHBIA
12500
1.71
Bonase Electronics (HK) Co., Limited
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12373
2.8
Dedicate Electronics (HK) Limited
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Gallop Great Holdings (Hong Kong) Limited
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OCEANIA INTERNATIONAL INDUSTRIAL LIMITED
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CIS Ltd (CHECK IC SOLUTION LIMITED)