Part Number | TK100S04N1L,LQ |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Toshiba |
Description | MOSFET N-CH 40V 100A DPAK |
Series | U-MOSVIII-H |
Packaging | |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 40V |
Current - Continuous Drain (Id) @ 25°C | 100A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Vgs(th) (Max) @ Id | 2.5V @ 500µA |
Gate Charge (Qg) (Max) @ Vgs | 76nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 5490pF @ 10V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 100W (Tc) |
Rds On (Max) @ Id, Vgs | 2.3 mOhm @ 50A, 10V |
Operating Temperature | 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | DPAK+ |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Image |
TK100S04N1L,LQ
TOSHBIA
18000
0.09
MY Group (Asia) Limited
TK100S04N1L,LQ
TOSHI
4000
0.7975
HK HEQING ELECTRONICS LIMITED
TK100S04N1L,LQ
TOSIBA
5000
1.505
CIS Ltd (CHECK IC SOLUTION LIMITED)
TK100S04N1LLQ
TOSIHBA
5000
2.2125
Ande Electronics Co., Limited
TK100S04N1L,LQ
TOSHIDA
300
2.92
Yingxinyuan INT'L (Group) Limited