Part Number | TK100L60W,VQ(O |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Toshiba |
Description | MOSFET N CH 600V 100A TO3P(L) |
Series | DTMOSIV |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25°C | 100A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 3.7V @ 5mA |
Gate Charge (Qg) (Max) @ Vgs | 360nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 15000pF @ 30V |
Vgs (Max) | ±30V |
FET Feature | Super Junction |
Power Dissipation (Max) | 797W (Tc) |
Rds On (Max) @ Id, Vgs | 18 mOhm @ 50A, 10V |
Operating Temperature | 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-3P(L) |
Package / Case | TO-3PL |
Image |
TK100L60WVQ(O
TOSHBIA
2500
1.07
ZODA (HK) ELECTRONIC TECHNOLOGY CO., LIMITED
TK100L60W,VQ(O
TOSHI
9890
1.8825
Acon Electronics Limited
TK100L60W,VQ(O
TOSIBA
4151
2.695
CIS Ltd (CHECK IC SOLUTION LIMITED)
TK100L60W,VQ
TOSIHBA
18000
3.5075
MY Group (Asia) Limited
TK100L60W,VQ(O
TOSHIDA
70
4.32
Yingxinyuan INT'L (Group) Limited