Part Number | TK100E10N1,S1X |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Toshiba |
Description | MOSFET N-CH 100V 100A TO220 |
Series | U-MOSVIII-H |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 100A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 4V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | 140nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 8800pF @ 50V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 255W (Tc) |
Rds On (Max) @ Id, Vgs | 3.4 mOhm @ 50A, 10V |
Operating Temperature | 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220 |
Package / Case | TO-220-3 |
Image |
TK100E10N1,S1X
TOSHBIA
3073
0.47
Gallop Great Holdings (Hong Kong) Limited
TK100E10N1,S1X(S
TOSHI
6989
1.1275
SUNTOP SEMICONDUCTOR CO., LIMITED
TK100E10N1S1X(S
TOSIBA
5694
1.785
Hongkong Dasenic Electronic Limited
TK100E10N1,S1X
TOSIHBA
9778
2.4425
RX ELECTRONICS LIMITED
TK100E10N1,S1X(S
TOSHIDA
1265
3.1
Shenzhen WTX Capacitor Co., Ltd.