Part Number | TK100E06N1,S1X(S |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Toshiba |
Description | MOSFET N CH 60V 100A TO-220 |
Series | U-MOSVIII-H |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25°C | 100A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 4V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | 140nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 10500pF @ 30V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 255W (Tc) |
Rds On (Max) @ Id, Vgs | 2.3 mOhm @ 50A, 10V |
Operating Temperature | 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220 |
Package / Case | TO-220-3 |
Image |
TK100E06N1,S1X(S
TOSHBIA
1000
1.6
Longisland Tech Co., Ltd
TK100E06N1,S1X(S
TOSHI
20000
2.8325
KST Components Limited
TK100E06N1,S1X(S
TOSIBA
15000
4.065
Redstar Electronic Limited
TK100E06N1,S1X(S
TOSIHBA
200
5.2975
DES TECHNOLOGY (HK) LIMITED
TK100E06N1,S1X(S
TOSHIDA
368000
6.53
Shenzhen WTX Capacitor Co., Ltd.