Part Number | TJ80S04M3L |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Toshiba |
Description | MOSFET P-CH 40V 80A DPAK-3 |
Series | U-MOSVI |
Packaging | Tape & Reel (TR) |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 40V |
Current - Continuous Drain (Id) @ 25°C | 80A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 3V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | 158nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 7770pF @ 10V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 100W (Tc) |
Rds On (Max) @ Id, Vgs | 5.2 mOhm @ 40A, 10V |
Operating Temperature | 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | DPAK+ |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Image |
TJ80S04M3L
TOSHBIA
5000000
1.81
Hongkong Shengshi Electronics Limited
TJ80S04M3L
TOSHI
4064
2.4225
Hongkong Dasenic Electronic Limited
TJ80S04M3L(T6L1,NQ
TOSIBA
77900
3.035
TLF ELECTRONICS LTD
TJ80S04M3L(T6L1,NQ
TOSIHBA
30000
3.6475
Redstar Electronic Limited
TJ80S04M3L(L1CH,NQ
TOSHIDA
11001
4.26
CIS Ltd (CHECK IC SOLUTION LIMITED)