Part Number | TJ60S06M3L |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Toshiba |
Description | MOSFET P-CH 60V 60A DPAK-3 |
Series | U-MOSVI |
Packaging | Tape & Reel (TR) |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25°C | 60A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 3V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | 156nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 7760pF @ 10V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 100W (Tc) |
Rds On (Max) @ Id, Vgs | 11.2 mOhm @ 30A, 10V |
Operating Temperature | 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | DPAK+ |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Image |
TJ60S06M3L
TOSHBIA
5000000
1.83
Hongkong Shengshi Electronics Limited
TJ60S06M3L
TOSHI
8456
2.615
Gallop Great Holdings (Hong Kong) Limited
TJ60S06M3L
TOSIBA
3150
3.4
CIS Ltd (CHECK IC SOLUTION LIMITED)
TJ60S06M3L
TOSIHBA
3363
4.185
Nosin (HK) Electronics Co.
TJ60S06M3L
TOSHIDA
3100
4.97
FLOWER GROUP(HK)CO.,LTD