Part Number | TJ60S04M3L(T6L1,NQ |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Toshiba |
Description | MOSFET P-CH 40V 60A DPAK-3 |
Series | U-MOSVI |
Packaging | Tape & Reel (TR) |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 40V |
Current - Continuous Drain (Id) @ 25°C | 60A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 3V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | 125nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 6510pF @ 10V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 90W (Tc) |
Rds On (Max) @ Id, Vgs | 6.3 mOhm @ 30A, 10V |
Operating Temperature | 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | DPAK+ |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Image |
TJ60S04M3L(T6L1,NQ
TOSHBIA
1000
0.56
MY Group (Asia) Limited
TJ60S04M3L(T6L1,NQ
TOSHI
25
1.7225
C-March Electronics Co.,Ltd
TJ60S04M3L(T6L1,NQ
TOSIBA
20000
2.885
HONG KONG LION ELECTRONIC LIMITED
TJ60S04M3L(T6L1,NQ
TOSIHBA
13008
4.0475
HongKong Wanghua Technology Limited
TJ60S06M3L(T6L1,NQ
TOSHIDA
1000
5.21
MY Group (Asia) Limited