Part Number | TJ40S04M3L |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Toshiba |
Description | MOSFET P-CH 40V 40A DPAK-3 |
Series | U-MOSVI |
Packaging | Tape & Reel (TR) |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 40V |
Current - Continuous Drain (Id) @ 25°C | 40A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 3V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | 83nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 4140pF @ 10V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 68W (Tc) |
Rds On (Max) @ Id, Vgs | 9.1 mOhm @ 20A, 10V |
Operating Temperature | 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | DPAK+ |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Image |
TJ40S04M3L
TOSHBIA
180
0.33
SUNTOP SEMICONDUCTOR CO., LIMITED
TJ40S04M3L
TOSHI
100
0.515
Yingxinyuan INT'L (Group) Limited
TJ40S04M3L
TOSIBA
21100
0.7
N&S Electronic Co., Limited
TJ40S04M3L(T6L1NQ
TOSIHBA
11050
0.885
CIS Ltd (CHECK IC SOLUTION LIMITED)
TJ40S04M3L
TOSHIDA
24960
1.07
N&S Electronic Co., Limited