Part Number | TJ30S06M3L(T6L1,NQ |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Toshiba |
Description | MOSFET P-CH 60V 30A DPAK-3 |
Series | U-MOSVI |
Packaging | Tape & Reel (TR) |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25°C | 30A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 3V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | 80nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 3950pF @ 10V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 68W (Tc) |
Rds On (Max) @ Id, Vgs | 21.8 mOhm @ 15A, 10V |
Operating Temperature | 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | DPAK+ |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Image |
TJ30S06M3L(T6L1,NQ
TOSHBIA
8000
0.26
Digchip Technology Co.,Limited
TJ30S06M3L(T6L1,NQ
TOSHI
1000
1.0625
MY Group (Asia) Limited
TJ30S06M3L(T6L1NQ
TOSIBA
30
1.865
Winsun Components Co., Ltd
TJ30S06M3L
TOSIHBA
12000
2.6675
Bonase Electronics (HK) Co., Limited
TJ30S06M3L
TOSHIDA
1715
3.47
Winsun Components Co., Ltd