Part Number | TJ30S06M3L |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Toshiba |
Description | MOSFET P-CH 60V 30A DPAK-3 |
Series | U-MOSVI |
Packaging | Tape & Reel (TR) |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25°C | 30A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 3V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | 80nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 3950pF @ 10V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 68W (Tc) |
Rds On (Max) @ Id, Vgs | 21.8 mOhm @ 15A, 10V |
Operating Temperature | 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | DPAK+ |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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TJ30S06M3L
TOSHBIA
438
0.18
Hongkong Dasenic Electronic Limited
TJ30S06M3L
TOSHI
2055
1.45
Hongkong Shengshi Electronics Limited
TJ30S06M3L
TOSIBA
9514
2.72
Bonase Electronics (HK) Co., Limited
TJ30S06M3L
TOSIHBA
1567
3.99
FLOWER GROUP(HK)CO.,LTD
TJ30S06M3L
TOSHIDA
6251
5.26
Nosin (HK) Electronics Co.