Part Number | TJ10S04M3L |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Toshiba |
Description | MOSFET P-CH 40V 10A DPAK-3 |
Series | U-MOSVI |
Packaging | Tape & Reel (TR) |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 40V |
Current - Continuous Drain (Id) @ 25°C | 10A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 3V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | 19nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 930pF @ 10V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 27W (Tc) |
Rds On (Max) @ Id, Vgs | 44 mOhm @ 5A, 10V |
Operating Temperature | 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | DPAK+ |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Image |
TJ10S04M3L
TOSHBIA
1763
1.06
Hongkong Shengshi Electronics Limited
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MY Group (Asia) Limited
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N&S Electronic Co., Limited
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