Part Number | TH58NYG3S0HBAI6 |
Main Category | Integrated Circuits (ICs) |
Sub Category | Memory |
Brand | Toshiba |
Description | IC EEPROM 8GBIT 25NS 67VFBGA |
Series | - |
Packaging | Tape & Reel (TR) |
Memory Type | Non-Volatile |
Memory Format | EEPROM |
Technology | EEPROM - NAND |
Memory Size | 8Gb (1G x 8) |
Clock Frequency | - |
Write Cycle Time - Word, Page | 25ns |
Access Time | 25ns |
Memory Interface | Parallel |
Voltage - Supply | 1.7 V ~ 1.95 V |
Operating Temperature | -40°C ~ 85°C (TA) |
Mounting Type | Surface Mount |
Package / Case | 67-VFBGA |
Supplier Device Package | 67-VFBGA (6.5x8) |
Image |
TH58NYG3S0HBAI6
TOSHBIA
10600
0.75
Hong Kong Capital Industrial Co.,Ltd
TH58NYG3S0HBAI6
TOSHI
11001
1.675
CIS Ltd (CHECK IC SOLUTION LIMITED)
TH58NYG3S0HBAI6
TOSIBA
500
2.6
HK HEQING ELECTRONICS LIMITED
TH58NYG3S0HBAI6
TOSIHBA
3000
3.525
HONG KONG YUE JIN PENG ELECTRONICS CO.
TH58NYG3S0HBAI6
TOSHIDA
15000
4.45
HongKong JDG Electronic Co., Limited