Part Number | TC58NYG1S3HBAI6 |
Main Category | Integrated Circuits (ICs) |
Sub Category | Memory |
Brand | Toshiba |
Description | IC EEPROM 2GBIT 25NS 67FBGA |
Series | - |
Packaging | Tray |
Memory Type | Non-Volatile |
Memory Format | EEPROM |
Technology | EEPROM - NAND |
Memory Size | 2Gb (256M x 8) |
Clock Frequency | - |
Write Cycle Time - Word, Page | 25ns |
Access Time | 25ns |
Memory Interface | Parallel |
Voltage - Supply | 1.7 V ~ 1.95 V |
Operating Temperature | -40°C ~ 85°C (TA) |
Mounting Type | Surface Mount |
Package / Case | 67-VFBGA |
Supplier Device Package | 67-VFBGA (6.5x8) |
Image |
TC58NYG1S3HBAI6
TOSHBIA
2276
0.77
Hong Kong Capital Industrial Co.,Ltd
TC58NYG1S3HBAI6
TOSHI
9691
1.9175
CIS Ltd (CHECK IC SOLUTION LIMITED)
TC58NYG1S3HBAI6
TOSIBA
6562
3.065
Dedicate Electronics (HK) Limited
TC58NYG1S3HBAI6
TOSIHBA
9958
4.2125
Innovation Best Electronics Technology Limited
TC58NYG1S3HBAI6
TOSHIDA
2271
5.36
HongKong JDG Electronic Co., Limited