Part Number | TC58NYG0S3HBAI6 |
Main Category | Integrated Circuits (ICs) |
Sub Category | Memory |
Brand | Toshiba |
Description | IC EEPROM 1GBIT 25NS 67VFBGA |
Series | - |
Packaging | Tray |
Memory Type | Non-Volatile |
Memory Format | EEPROM |
Technology | EEPROM - NAND |
Memory Size | 1Gb (128M x 8) |
Clock Frequency | - |
Write Cycle Time - Word, Page | 25ns |
Access Time | 25ns |
Memory Interface | Parallel |
Voltage - Supply | 1.7 V ~ 1.95 V |
Operating Temperature | -40°C ~ 85°C (TA) |
Mounting Type | Surface Mount |
Package / Case | 67-VFBGA |
Supplier Device Package | 67-VFBGA (6.5x8) |
Image |
TC58NYG0S3HBAI6
TOSHBIA
634
1.87
Gallop Great Holdings (Hong Kong) Limited
TC58NYG0S3HBAI6
TOSHI
4560
2.74
Seven-Two Tech (HK) Co., Limited
TC58NYG0S3HBAI6
TOSIBA
2618
3.61
Hong Kong Capital Industrial Co.,Ltd
TC58NYG0S3HBAI6
TOSIHBA
596
4.48
Ande Electronics Co., Limited
TC58NYG0S3HBAI6
TOSHIDA
4833
5.35
HXY Electronics (HK) Co.,Limited