Description
EEPROM SLC 2GB NAND 24NM 67VFBGA Series: Benand? Format - Memory: EEPROMs - Serial Memory Type: EEPROM - NAND Memory Size: 2G (256M x 8) Speed: 25ns Interface: Parallel Voltage - Supply: 1.7 V ~ 1.95 V Operating Temperature: -40~C ~ 85~C Package / Case: 67-VFBGA Supplier Device Package: 67-VFBGA (6.5x8)
Part Number | TC58BYG1S3HBAI6 |
Main Category | Integrated Circuits (ICs) |
Sub Category | Memory |
Brand | Toshiba |
Description | IC EEPROM 2GBIT 25NS 67VFBGA |
Series | Benand |
Packaging | Non-Volatile |
Memory Type | Tray |
Memory Format | EEPROM |
Technology | EEPROM - NAND |
Memory Size | 2Gb (256M x 8) |
Clock Frequency | - |
Write Cycle Time - Word, Page | 25ns |
Access Time | 25ns |
Memory Interface | Parallel |
Voltage - Supply | 1.7 V ~ 1.95 V |
Operating Temperature | -40°C ~ 85°C (TA) |
Mounting Type | Surface Mount |
Package / Case | 67-VFBGA |
Supplier Device Package | 67-VFBGA (6.5x8) |
Image |
TC58BYG1S3HBAI6
TOSHBIA
500
0.97
HK HEQING ELECTRONICS LIMITED
TC58BYG1S3HBAI6
TOSHI
10600
1.6975
Hong Kong Capital Industrial Co.,Ltd
TC58BYG1S3HBAI6
TOSIBA
37500
2.425
Cinty Int'l (HK) Industry Co., Limited
TC58BYG1S3HBAI6
TOSIHBA
2000
3.1525
Xinnlinx Electronics Pte Ltd
TC58BYG1S3HBAI6
TOSHIDA
21000
3.88
N&S Electronic Co., Limited