Description
EEPROM SLC 4GB NAND 24NM 63FBGA Series: Benand? Format - Memory: EEPROMs - Serial Memory Type: EEPROM - NAND Memory Size: 4G (512M x 8) Speed: 25ns Interface: Parallel Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40~C ~ 85~C Package / Case: 63-VFBGA Supplier Device Package: 63-TFBGA (9x11)
Part Number | TC58BVG2S0HBAI4 |
Main Category | Integrated Circuits (ICs) |
Sub Category | Memory |
Brand | Toshiba |
Description | IC EEPROM 4GBIT 25NS 63FBGA |
Series | Benand |
Packaging | Non-Volatile |
Memory Type | Tray |
Memory Format | EEPROM |
Technology | EEPROM - NAND |
Memory Size | 4Gb (512M x 8) |
Clock Frequency | - |
Write Cycle Time - Word, Page | 25ns |
Access Time | 25ns |
Memory Interface | Parallel |
Voltage - Supply | 2.7 V ~ 3.6 V |
Operating Temperature | -40°C ~ 85°C (TA) |
Mounting Type | Surface Mount |
Package / Case | 63-VFBGA |
Supplier Device Package | 63-TFBGA (9x11) |
Image |
TC58BVG2S0HBAI4
TOSHBIA
500
1.88
HK HEQING ELECTRONICS LIMITED
TC58BVG2S0HBAI4
TOSHI
5999
2.6125
Huajiaxin Electronic Technology (Hong Kong) Co., Limited
TC58BVG2S0HBAI4_TRAY
TOSIBA
11140
3.345
CIS Ltd (CHECK IC SOLUTION LIMITED)
TC58BVG2S0HBAI4
TOSIHBA
10201
4.0775
Viassion Technology Co., Limited
TC58BVG2S0HBAI4
TOSHIDA
21514
4.81
N&S Electronic Co., Limited