Part Number | STM STW21NM60ND |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Toshiba |
Description | MOSFET N-CH 600V 17A TO-247 |
Series | FDmesh,II |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25°C | 17A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 60nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1800pF @ 50V |
Vgs (Max) | ±25V |
FET Feature | - |
Power Dissipation (Max) | 140W (Tc) |
Rds On (Max) @ Id, Vgs | 220 mOhm @ 8.5A, 10V |
Operating Temperature | 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-247-3 |
Package / Case | TO-247-3 |
Image |
STW21NM60ND
TOSHBIA
3780
1.2
AMAX ELECTRONIC TECHNOLOGY PTE.LTD.
STW21NM60ND
TOSHI
12800
1.94
Sunton Electronics Co., Limited
STW21NM60ND
TOSIBA
3540
2.68
Corich International Ltd.
STW21NM60ND
TOSIHBA
323700
3.42
Cicotex Electronics (HK) Limited
STW21NM60ND
TOSHIDA
1250
4.16
RX ELECTRONICS LIMITED