Part Number | STGD5H60DF |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - IGBTs - Single |
Brand | Toshiba |
Description | TRENCH GATE FIELD-STOP IGBT, H S |
Series | - |
Packaging | Tape & Reel (TR) |
IGBT Type | Trench Field Stop |
Voltage - Collector Emitter Breakdown (Max) | 600V |
Current - Collector (Ic) (Max) | 10A |
Current - Collector Pulsed (Icm) | 20A |
Vce(on) (Max) @ Vge, Ic | 1.95V @ 15V, 5A |
Power - Max | 83W |
Switching Energy | 56µJ (on), 78.5µJ (off) |
Input Type | Standard |
Gate Charge | 43nC |
Td (on/off) @ 25°C | 30ns/140ns |
Test Condition | 400V, 5A, 47 Ohm, 15V |
Reverse Recovery Time (trr) | 134.5ns |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package | DPAK |
Image |
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