Part Number | STFI34NM60N |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Toshiba |
Description | MOSFET N-CH 600V 29A I2PAK FP |
Series | MDmesh,II |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25°C | 29A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 84nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 2722pF @ 100V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 40W (Tc) |
Rds On (Max) @ Id, Vgs | 105 mOhm @ 14.5A, 10V |
Operating Temperature | 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | I2PAKFP (TO-281) |
Package / Case | TO-262-3 Full Pack, I²ÂPak |
Image |
STFI34NM60N
TOSHBIA
9031
1.39
Sunton Electronics Co., Limited
STFI34NM60N
TOSHI
8145
2.77
MY Group (Asia) Limited
STFI34NM60N
TOSIBA
4549
4.15
CIS Ltd (CHECK IC SOLUTION LIMITED)
STFI34NM60N
TOSIHBA
6252
5.53
ONSTAR ELECTRONICS CO., LIMITED
STFI34NM60N
TOSHIDA
3024
6.91
Yingxinyuan INT'L (Group) Limited