Part Number | STFI20N65M5 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Toshiba |
Description | MOSFET N CH 650V 18A I2PAKFP |
Series | MDmesh,V |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 650V |
Current - Continuous Drain (Id) @ 25°C | 18A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 45nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1345pF @ 100V |
Vgs (Max) | ±25V |
FET Feature | - |
Power Dissipation (Max) | 130W (Tc) |
Rds On (Max) @ Id, Vgs | 190 mOhm @ 9A, 10V |
Operating Temperature | 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | I2PAKFP (TO-281) |
Package / Case | TO-262-3 Full Pack, I²ÂPak |
Image |
STFI20N65M5
TOSHBIA
14000
1.82
MY Group (Asia) Limited
STFI20N65M5
TOSHI
3260
2.9225
ONSTAR ELECTRONICS CO., LIMITED
STFI20N65M5
TOSIBA
20000
4.025
Ande Electronics Co., Limited
STFI20N65M5TK17A65D
TOSIHBA
5952
5.1275
Dedicate Electronics (HK) Limited
STFI20NK50Z
TOSHIDA
8835
6.23
OCEANIA INTERNATIONAL INDUSTRIAL LIMITED