Part Number | STF9NM60N |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Toshiba |
Description | MOSFET N-CH 600V 6.5A TO220FP |
Series | MDmesh,II |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25°C | 6.5A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 17.4nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 452pF @ 50V |
Vgs (Max) | ±25V |
FET Feature | - |
Power Dissipation (Max) | 25W (Tc) |
Rds On (Max) @ Id, Vgs | 745 mOhm @ 3.25A, 10V |
Operating Temperature | 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220FP |
Package / Case | TO-220-3 Full Pack |
Image |
STF9NM60N
TOSHBIA
1852
0.29
Gallop Great Holdings (Hong Kong) Limited
STF9NM60N
TOSHI
20000
1.8875
HK XINYI COMPONENTS ASIA CO., LIMITED
STF9NM60N
TOSIBA
8900
3.485
ONSTAR ELECTRONICS CO., LIMITED
STF9NM60N
TOSIHBA
3000
5.0825
Corich International Ltd.
STF9NM60N TK6A60
TOSHIDA
43363
6.68
CIS Ltd (CHECK IC SOLUTION LIMITED)