Part Number | STF7NM60N |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Toshiba |
Description | MOSFET N-CH 600V 4.7A TO-220FP |
Series | MDmesh,II |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25°C | 5A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 14nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 363pF @ 50V |
Vgs (Max) | ±25V |
FET Feature | - |
Power Dissipation (Max) | 20W (Tc) |
Rds On (Max) @ Id, Vgs | 900 mOhm @ 2.5A, 10V |
Operating Temperature | 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220FP |
Package / Case | TO-220-5 Full Pack |
Image |
STF7NM60N
TOSHBIA
12800
1.74
Sunton Electronics Co., Limited
STF7NM60N
TOSHI
9999
2.4525
HK HEQING ELECTRONICS LIMITED
STF7NM60N
TOSIBA
1000
3.165
Corich International Ltd.
STF7NM60N
TOSIHBA
8856
3.8775
HL Electronics (Hong Kong) Co.,Ltd
STF7NM60N
TOSHIDA
25000
4.59
SUMMER TECH(HK) LIMITED