Part Number | STF34NM60N |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Toshiba |
Description | MOSFET N-CH 600V 29.0A TO220FP |
Series | MDmesh,II |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25°C | 31.5A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 84nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 2722pF @ 100V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 40W (Tc) |
Rds On (Max) @ Id, Vgs | 105 mOhm @ 14.5A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220FP |
Package / Case | TO-220-3 Full Pack |
Image |
STF34NM60N
TOSHBIA
4137
1.37
Gallop Great Holdings (Hong Kong) Limited
STF34NM60N
TOSHI
4416
2.6825
Fairstock HK Limited
STF34NM60N
TOSIBA
1658
3.995
SUMMER TECH(HK) LIMITED
STF34NM60N
TOSIHBA
7654
5.3075
Origchip (HK) Electronic Limited
STF34NM60N
TOSHIDA
830
6.62
N&S Electronic Co., Limited