Part Number | STF18NM60N |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Toshiba |
Description | MOSFET N-CH 600V 13A TO-220FP |
Series | MDmesh,II |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25°C | 13A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 35nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1000pF @ 50V |
Vgs (Max) | ±25V |
FET Feature | - |
Power Dissipation (Max) | 30W (Tc) |
Rds On (Max) @ Id, Vgs | 285 mOhm @ 6.5A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220FP |
Package / Case | TO-220-3 Full Pack |
Image |
STF18NM60N
TOSHBIA
814
1.73
Gallop Great Holdings (Hong Kong) Limited
STF18NM60N
TOSHI
12800
2.7925
Sunton Electronics Co., Limited
STF18NM60N
TOSIBA
1000
3.855
Corich International Ltd.
STF18NM60N
TOSIHBA
10222
4.9175
INCARE TECHNOLOGY CO., LIMITED
STF18NM60N
TOSHIDA
5650
5.98
Hong Kong Borui Jintong Technology Co., Limited