Part Number | SSVMUN5312DW1T2G |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - Arrays, Pre-Biased |
Brand | Toshiba |
Description | TRANS BRT DUAL 100MA 50V SOT363 |
Series | - |
Packaging | Tape & Reel (TR) |
Transistor Type | 1 NPN, 1 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) (Ohms) | 22k |
Resistor - Emitter Base (R2) (Ohms) | 22k |
DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
Current - Collector Cutoff (Max) | 500nA |
Frequency - Transition | - |
Power - Max | 187mW |
Mounting Type | Surface Mount |
Package / Case | 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package | SC-88/SC70-6/SOT-363 |
Image |
Hot Offer
SSVMUN5312DW1T2G
TOSHIDA
90000
5.99
I GYRE CO., LIMITED
SSVMUN5312DW1T2G
TOSHBIA
10000
0.16
Shenzhen Taochip Electronic Co.,Ltd
SSVMUN5312DW1T2G
TOSHI
3000
1.6175
Gallop Great Holdings (Hong Kong) Limited
SSVMUN5312DW1T2G
TOSIBA
20000
3.075
Yingxinyuan INT'L (Group) Limited
SSVMUN5312DW1T2G
TOSIHBA
24000
4.5325
N&S Electronic Co., Limited