Description
MOSFET 2P-CH 20V 4A Series: - FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate, 1.5V Drive Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25~C: 4A Rds On (Max) @ Id, Vgs: 33 mOhm @ 4A, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) @ Vgs: 3.6nC @ 4.5V Input Capacitance (Ciss) @ Vds: 410pF @ 10V Power - Max: 2W Operating Temperature: -55~C ~ 150~C (TJ) Mounting Type: * Package / Case: * Supplier Device Package: *
Part Number | SSM6N61NU,LF |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Arrays |
Brand | Toshiba |
Description | MOSFET 2N-CH 20V 4A UDFN |
Series | - |
Packaging | Tape & Reel (TR) |
FET Type | 2 N-Channel (Dual) |
FET Feature | Logic Level Gate, 1.5V Drive |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 4A |
Rds On (Max) @ Id, Vgs | 33 mOhm @ 4A, 4.5V |
Vgs(th) (Max) @ Id | 1V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | 3.6nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | 410pF @ 10V |
Power - Max | 2W |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 6-WDFN Exposed Pad |
Supplier Device Package | 6-UDFNB (2x2) |
Image |
SSM6N61NU,LF
TOSHBIA
616000
0.73
Yingxinyuan INT'L (Group) Limited
SSM6N61NU,LF(T
TOSHI
200
1.86
DES TECHNOLOGY (HK) LIMITED
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TOSIBA
59000
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N&S Electronic Co., Limited
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TOSIHBA
11486
4.12
Viassion Technology Co., Limited
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5.25
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