Part Number | SSM6N58NU,LF(T |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Arrays |
Brand | Toshiba |
Description | MOSFET 2N-CH 30V 4A UDFN6 |
Series | - |
Packaging | |
FET Type | 2 N-Channel (Dual) |
FET Feature | Logic Level Gate, 1.8V Drive |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 4A |
Rds On (Max) @ Id, Vgs | 84 mOhm @ 2A, 4.5V |
Vgs(th) (Max) @ Id | 1V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | 1.8nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | 129pF @ 15V |
Power - Max | 1W |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 6-WDFN Exposed Pad |
Supplier Device Package | 6-UDFN (2x2) |
Image |
SSM6N58NU,LF(T
TOSHBIA
914
0.29
SUNTOP SEMICONDUCTOR CO., LIMITED
SSM6N58NULF
TOSHI
5114
1.3225
Hongkong Dasenic Electronic Limited
SSM6N58NU,LF(T
TOSIBA
6679
2.355
Gallop Great Holdings (Hong Kong) Limited
SSM6N58NU,LF(T
TOSIHBA
943
3.3875
N&S Electronic Co., Limited
SSM6N58NU,LF(T
TOSHIDA
5801
4.42
N&S Electronic Co., Limited