Description
MOSFET 2N-CH 20V 0.8A Series: - FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate, 1.5V Drive Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25~C: 800mA Rds On (Max) @ Id, Vgs: 235 mOhm @ 800mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) @ Vgs: 1nC @ 4.5V Input Capacitance (Ciss) @ Vds: 55pF @ 10V Power - Max: 150mW Operating Temperature: 150~C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: ES6
Part Number | SSM6N56FE,LM |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Arrays |
Brand | Toshiba |
Description | MOSFET 2N-CH 20V 0.8A |
Series | - |
Packaging | Tape & Reel (TR) |
FET Type | 2 N-Channel (Dual) |
FET Feature | Logic Level Gate, 1.5V Drive |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 800mA |
Rds On (Max) @ Id, Vgs | 235 mOhm @ 800mA, 4.5V |
Vgs(th) (Max) @ Id | 1V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | 1nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | 55pF @ 10V |
Power - Max | 150mW |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | SOT-563, SOT-666 |
Supplier Device Package | ES6 |
Image |
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