Description
MOSFET 2N-CH 30V 4A UDFN6 Series: - FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25~C: 4A Rds On (Max) @ Id, Vgs: 46 mOhm @ 4A, 10V Vgs(th) (Max) @ Id: 2.5V @ 100米A Gate Charge (Qg) @ Vgs: 2.5nC @ 4.5V Input Capacitance (Ciss) @ Vds: 280pF @ 15V Power - Max: 1W Operating Temperature: 150~C (TJ) Mounting Type: Surface Mount Package / Case: 6-WDFN Exposed Pad Supplier Device Package: 6-米DFN(2x2)
Part Number | SSM6N55NU,LF(T |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Arrays |
Brand | Toshiba |
Description | MOSFET 2N-CH 30V 4A UDFN6 |
Series | - |
Packaging | Cut Tape (CT) |
FET Type | 2 N-Channel (Dual) |
FET Feature | Logic Level Gate |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 4A |
Rds On (Max) @ Id, Vgs | 46 mOhm @ 4A, 10V |
Vgs(th) (Max) @ Id | 2.5V @ 100µA |
Gate Charge (Qg) (Max) @ Vgs | 2.5nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | 280pF @ 15V |
Power - Max | 1W |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 6-WDFN Exposed Pad |
Supplier Device Package | 6-µDFN(2x2) |
Image |
SSM6N55NU,LF(T
TOSHBIA
3000
1.66
ASIAWAY (H.K.) LIMITED
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TOSHI
8000
2.7775
MY Group (Asia) Limited
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TOSIBA
426
3.895
Southern Electronics Tech Limited
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TOSIHBA
15000
5.0125
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562
6.13
HK TWO L ELECTRONIC LIMITED