Description
MOSFET N/P-CH 20V 0.5A/0.33A ES6 Series: - FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25~C: 500mA, 330mA Rds On (Max) @ Id, Vgs: 630 mOhm @ 200mA, 5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) @ Vgs: 1.23nC @ 4V Input Capacitance (Ciss) @ Vds: 46pF @ 10V Power - Max: 150mW Operating Temperature: 150~C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: ES6 (1.6x1.6)
Part Number | SSM6L36FE,LM |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Arrays |
Brand | Toshiba |
Description | MOSFET N/P-CH 20V 0.5A/0.33A ES6 |
Series | - |
Packaging | Tape & Reel (TR) |
FET Type | N and P-Channel |
FET Feature | Logic Level Gate |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 500mA, 330mA |
Rds On (Max) @ Id, Vgs | 630 mOhm @ 200mA, 5V |
Vgs(th) (Max) @ Id | 1V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | 1.23nC @ 4V |
Input Capacitance (Ciss) (Max) @ Vds | 46pF @ 10V |
Power - Max | 150mW |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | SOT-563, SOT-666 |
Supplier Device Package | ES6 (1.6x1.6) |
Image |
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