Description
SSM6K411TU, TOSHIBA, SOT-323-6, Discrete Semiconductor Products, FETs - Single
Part Number | SSM6K411TU |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Toshiba |
Description | MOSFET N-CH 20V 10A |
Series | U-MOSIV |
Packaging | Cut Tape (CT) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 10A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
Vgs(th) (Max) @ Id | 1.2V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | 9.4nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | 710pF @ 10V |
Vgs (Max) | ±12V |
FET Feature | - |
Power Dissipation (Max) | 1W (Ta) |
Rds On (Max) @ Id, Vgs | 12 mOhm @ 7A, 4.5V |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | UF6 |
Package / Case | 6-SMD, Flat Leads |
Image |
SSM6K411TU
TOSHBIA
5000000
0.04
Hongkong Shengshi Electronics Limited
SSM6K411TU
TOSHI
1600
0.7325
Gallop Great Holdings (Hong Kong) Limited
SSM6K411TU(TE85L,F
TOSIBA
11300
1.425
CIS Ltd (CHECK IC SOLUTION LIMITED)
SSM6K411TU
TOSIHBA
36798
2.1175
Hong Kong H.D.W Trading Co., Limited
SSM6K411TU
TOSHIDA
8250
2.81
Yingxinyuan INT'L (Group) Limited