Part Number | SSM6K403TULF |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Toshiba |
Description | MOSFET N-CH 20V 4.2A |
Series | U-MOSIII |
Packaging | Tape & Reel (TR) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 4.2A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4V |
Vgs(th) (Max) @ Id | 1V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | 16.8nC @ 4V |
Input Capacitance (Ciss) (Max) @ Vds | 1050pF @ 10V |
Vgs (Max) | ±10V |
FET Feature | - |
Power Dissipation (Max) | 500mW (Ta) |
Rds On (Max) @ Id, Vgs | 28 mOhm @ 3A, 4V |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | UF6 |
Package / Case | 6-SMD, Flat Leads |
Image |
SSM6K403TU,LF
TOSHBIA
15000
1.76
MY Group (Asia) Limited
SSM6K403TULF
TOSHI
5879
2.6625
Dedicate Electronics (HK) Limited
SSM6K403TULF
TOSIBA
200
3.565
Ic Base Limited
SSM6K403TULF
TOSIHBA
475789
4.4675
TERNARY UNION CO., LIMITED
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TOSHIDA
1049
5.37
Yingxinyuan INT'L (Group) Limited