Part Number | SSM6K211FE,LF(CA |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Toshiba |
Description | MOSFET N-CH 20V 3.2A ES6 |
Series | U-MOSIII |
Packaging | Cut Tape (CT) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 3.2A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4.5V |
Vgs(th) (Max) @ Id | 1V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | 10.8nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | 510pF @ 10V |
Vgs (Max) | ±10V |
FET Feature | - |
Power Dissipation (Max) | 500mW (Ta) |
Rds On (Max) @ Id, Vgs | 47 mOhm @ 2A, 4.5V |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | ES6 (1.6x1.6) |
Package / Case | SOT-563, SOT-666 |
Image |
SSM6K211FE,LF
TOSHBIA
4668
0.55
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
SSM6K211FE,LF(CA
TOSHI
9475
1.5275
Redstar Electronic Limited
SSM6K211FE,LF(CA
TOSIBA
6128
2.505
Shenzhen Haixinyuan Electronics Co., Ltd.
SSM6K211FE,LF(CA
TOSIHBA
4609
3.4825
Shenzhen WTX Capacitor Co., Ltd.
SSM6K211FE,LF(CA
TOSHIDA
8572
4.46
DES TECHNOLOGY (HK) LIMITED