Part Number | SSM6J512NU,LF |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Toshiba |
Description | MOSFET P-CH 12V 10A UDFN6B |
Series | U-MOSVII |
Packaging | Cut Tape (CT) |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 12V |
Current - Continuous Drain (Id) @ 25°C | 10A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 8V |
Vgs(th) (Max) @ Id | 1V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | 19.5nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | 1400pF @ 6V |
Vgs (Max) | ±10V |
FET Feature | - |
Power Dissipation (Max) | 1.25W (Ta) |
Rds On (Max) @ Id, Vgs | 16.2 mOhm @ 4A, 8V |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 6-UDFNB (2x2) |
Package / Case | 6-WDFN Exposed Pad |
Image |
SSM6J512NU,LF
TOSHBIA
17027
0.3
RX ELECTRONICS LIMITED
SSM6J512NU,LF
TOSHI
15000
1.4075
Yingxinyuan INT'L (Group) Limited
SSM6J512NU,LF(T
TOSIBA
198000
2.515
Cicotex Electronics (HK) Limited
SSM6J512NU,LF(T
TOSIHBA
138000
3.6225
HYTON TECHNOLOGY LIMITED
SSM6J512NU,LF
TOSHIDA
69000
4.73
Ande Electronics Co., Limited