Part Number | SSM6J511NU,LF |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Toshiba |
Description | MOSFET P-CH 12V 14A UDFN6B |
Series | U-MOSVII |
Packaging | |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 12V |
Current - Continuous Drain (Id) @ 25°C | 14A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 1V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | 47nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | 3350pF @ 6V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 1.25W (Ta) |
Rds On (Max) @ Id, Vgs | 9.1 mOhm @ 4A, 8V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 6-UDFNB (2x2) |
Package / Case | 6-WDFN Exposed Pad |
Image |
SSM6J511NU,LF(B
TOSHBIA
6600
0.97
Ysx Tech Co., Limited
SSM6J511NU,LF
TOSHI
1000
1.5025
KYO Inc.
SSM6J511NU,LF
TOSIBA
14000
2.035
CIS Ltd (CHECK IC SOLUTION LIMITED)
SSM6J511NU,LF
TOSIHBA
20000
2.5675
KST Components Limited
SSM6J511NU,LF(T
TOSHIDA
13000
3.1
N&S Electronic Co., Limited