Part Number | SSM6J507NU,LF |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Toshiba |
Description | MOSFET P-CH 30V 10A 6UDFN |
Series | U-MOSVI |
Packaging | Cut Tape (CT) |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 10A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
Vgs(th) (Max) @ Id | 2.2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 20.4nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | 1150pF @ 15V |
Vgs (Max) | +20V, -25V |
FET Feature | - |
Power Dissipation (Max) | 1.25W (Ta) |
Rds On (Max) @ Id, Vgs | 20 mOhm @ 4A, 10V |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 6-UDFNB (2x2) |
Package / Case | 6-WDFN Exposed Pad |
Image |
SSM6J507NU,LF
TOSHBIA
180
0.93
SUNTOP SEMICONDUCTOR CO., LIMITED
SSM6J507NU,LF
TOSHI
6950
1.8
ONSTAR ELECTRONICS CO., LIMITED
SSM6J507NULF
TOSIBA
13970
2.67
CIS Ltd (CHECK IC SOLUTION LIMITED)
SSM6J507NU,LF
TOSIHBA
4000
3.54
SHERLOCK ELECTRONICS LIMITED
SSM6J507NU,LF(T
TOSHIDA
90000
4.41
Redstar Electronic Limited