Part Number | SSM6J501NU,LF |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Toshiba |
Description | MOSFET P-CH 20V 10A UDFN6B |
Series | U-MOSVI |
Packaging | Tape & Reel (TR) |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 10A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4.5V |
Vgs(th) (Max) @ Id | 1V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | 29.9nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | 2600pF @ 10V |
Vgs (Max) | ±8V |
FET Feature | - |
Power Dissipation (Max) | 1W (Ta) |
Rds On (Max) @ Id, Vgs | 15.3 mOhm @ 4A, 4.5V |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 6-UDFNB (2x2) |
Package / Case | 6-WDFN Exposed Pad |
Image |
SSM6J501NU,LF
TOSHBIA
3000
0.49
Gallop Great Holdings (Hong Kong) Limited
SSM6J501NULF
TOSHI
7330
1.4425
Hongkong Dasenic Electronic Limited
SSM6J501NU,LF(T
TOSIBA
200
2.395
DES TECHNOLOGY (HK) LIMITED
SSM6J501NU,LF
TOSIHBA
20000
3.3475
Siglomax Integrated circuit Co,Ltd
SSM6J501NULF
TOSHIDA
1040
4.3
FLOWER GROUP(HK)CO.,LTD