Part Number | SSM6J414TU,LF(B |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Toshiba |
Description | MOSFET P CH 20V 6A UF6 |
Series | U-MOSVI |
Packaging | |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 6A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4.5V |
Vgs(th) (Max) @ Id | 1V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | 23.1nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | 1650pF @ 10V |
Vgs (Max) | ±8V |
FET Feature | - |
Power Dissipation (Max) | 1W (Ta) |
Rds On (Max) @ Id, Vgs | 22.5 mOhm @ 6A, 4.5V |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | UF6 |
Package / Case | 6-SMD, Flat Leads |
Image |
SSM6J414TU,LF(B
TOSHBIA
200
0.91
DES TECHNOLOGY (HK) LIMITED
SSM6J414TULF
TOSHI
2000
1.5075
Hong Kong Fly Bird Technology Limited
SSM6J414TULF
TOSIBA
5998
2.105
Y.H.X ELECTRONIC TECHNOLOGY HK LIMITED
SSM6J414TU,LF
TOSIHBA
2244
2.7025
WIN AND WIN ELECTRONICS LIMITED
SSM6J414TU,LF(B
TOSHIDA
368000
3.3
Shenzhen WTX Capacitor Co., Ltd.