Part Number | SSM6J409TU |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Toshiba |
Description | MOSFET P-CH 20V 9.5A UF6 |
Series | U-MOSV |
Packaging | |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 9.5A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 1V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | 15nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | 1100pF @ 10V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 1W (Ta) |
Rds On (Max) @ Id, Vgs | 22.1 mOhm @ 3A, 4.5V |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | UF6 |
Package / Case | 6-SMD, Flat Leads |
Image |
SSM6J409TU
TOSHBIA
2846
0.87
KDH SEMICONDUCTOR CO., LIMITED
SSM6J409TU
TOSHI
708
1.99
Hongkong Shengshi Electronics Limited
SSM6J409TU
TOSIBA
5819
3.11
HK HEQING ELECTRONICS LIMITED
SSM6J409TU
TOSIHBA
6154
4.23
CIS Ltd (CHECK IC SOLUTION LIMITED)
SSM6J409TU
TOSHIDA
2080
5.35
Yingxinyuan INT'L (Group) Limited