Part Number | SSM6J206FE |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Toshiba |
Description | MOSFET P-CH 20V 2A ES6 |
Series | - |
Packaging | Tape & Reel (TR) |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 2A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4V |
Vgs(th) (Max) @ Id | 1V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | - |
Input Capacitance (Ciss) (Max) @ Vds | 335pF @ 10V |
Vgs (Max) | ±8V |
FET Feature | - |
Power Dissipation (Max) | 500mW (Ta) |
Rds On (Max) @ Id, Vgs | 130 mOhm @ 1A, 4V |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | ES6 (1.6x1.6) |
Package / Case | SOT-563, SOT-666 |
Image |
SSM6J206FE
TOSHBIA
19000
0.97
CIS Ltd (CHECK IC SOLUTION LIMITED)
SSM6J206FE(TE85L,F
TOSHI
10151
1.735
Viassion Technology Co., Limited
SSM6J206FE
TOSIBA
33000
2.5
N&S Electronic Co., Limited
SSM6J206FE (TE85L
TOSIHBA
2000
3.265
Yingxinyuan INT'L (Group) Limited
SSM6J206FE (TE85L
TOSHIDA
14400
4.03
N&S Electronic Co., Limited