Part Number | SSM5G10TU |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Toshiba |
Description | MOSFET P-CH 20V 1.5A UFV |
Series | U-MOSIII |
Packaging | Cut Tape (CT) |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 1.5A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 1V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | 6.4nC @ 4V |
Input Capacitance (Ciss) (Max) @ Vds | 250pF @ 10V |
Vgs (Max) | - |
FET Feature | Schottky Diode (Isolated) |
Power Dissipation (Max) | 500mW (Ta) |
Rds On (Max) @ Id, Vgs | 213 mOhm @ 1A, 4V |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | UFV |
Package / Case | 6-SMD (5 Leads), Flat Lead |
Image |
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