Part Number | SSM3K318T,LF |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Toshiba |
Description | MOSFET N-CH 60V 2.5A TSM |
Series | U-MOSIV |
Packaging | |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25°C | 2.5A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | - |
Gate Charge (Qg) (Max) @ Vgs | 7nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 235pF @ 30V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 700mW (Ta) |
Rds On (Max) @ Id, Vgs | 107 mOhm @ 2A, 10V |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | TSM |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Image |
SSM3K318T,LF
TOSHBIA
1000
0.3
MY Group (Asia) Limited
SSM3K318T,LF
TOSHI
1799
1.4525
HK HEQING ELECTRONICS LIMITED
SSM3K318T,LF
TOSIBA
3204
2.605
CIS Ltd (CHECK IC SOLUTION LIMITED)
SSM3K318T,LF
TOSIHBA
301000
3.7575
TERNARY UNION CO., LIMITED
SSM3K318T,LF
TOSHIDA
6000
4.91
Yingxinyuan INT'L (Group) Limited