Part Number | SSM3K316T |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Toshiba |
Description | MOSFET N-CH 30V 4A TSM |
Series | - |
Packaging | |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 4A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 1V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | 4.3nC @ 4V |
Input Capacitance (Ciss) (Max) @ Vds | 270pF @ 10V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 700mW (Ta) |
Rds On (Max) @ Id, Vgs | 53 mOhm @ 3A, 10V |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | TSM |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Image |
SSM3K316T
TOSHBIA
7347
0.45
Gallop Great Holdings (Hong Kong) Limited
SSM3K316T
TOSHI
6699
1.065
Hong Kong Capital Industrial Co.,Ltd
SSM3K316T
TOSIBA
8577
1.68
Yingxinyuan INT'L (Group) Limited
SSM3K316T
TOSIHBA
4998
2.295
Shenzhen WTX Capacitor Co., Ltd.
SSM3K316T
TOSHIDA
4004
2.91
CIS Ltd (CHECK IC SOLUTION LIMITED)