Description
SSM3K303T, TOSHIBA, SOT-23, Discrete Semiconductor Products, FETs - Single
Part Number | SSM3K303T |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Toshiba |
Description | MOSFET N-CH 30V 2.9A TSM |
Series | 蟺-MOSVII |
Packaging | |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 2.9A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 2.6V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | 3.3nC @ 4V |
Input Capacitance (Ciss) (Max) @ Vds | 180pF @ 10V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 700mW (Ta) |
Rds On (Max) @ Id, Vgs | 83 mOhm @ 1.5A, 10V |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | TSM |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Image |
SSM3K303T
TOSHBIA
4495
0.35
Gallop Great Holdings (Hong Kong) Limited
SSM3K303T(TE85L
TOSHI
11001
1.4025
N&S Electronic Co., Limited
SSM3K303T
TOSIBA
11800
2.455
Antony Electronic Ltd.
SSM3K303T
TOSIHBA
368000
3.5075
Shenzhen WTX Capacitor Co., Ltd.
SSM3K303T
TOSHIDA
3250
4.56
Yingxinyuan INT'L (Group) Limited