Part Number | SSM3J56MFV,L3F(T |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Toshiba |
Description | MOSFET P-CH 20V 0.8A VESM |
Series | U-MOSVI |
Packaging | Tape & Reel (TR) |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 800mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 1.2V, 4.5V |
Vgs(th) (Max) @ Id | - |
Gate Charge (Qg) (Max) @ Vgs | - |
Input Capacitance (Ciss) (Max) @ Vds | 100pF @ 10V |
Vgs (Max) | ±8V |
FET Feature | - |
Power Dissipation (Max) | 150mW (Ta) |
Rds On (Max) @ Id, Vgs | 390 mOhm @ 800mA, 4.5V |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | VESM |
Package / Case | SOT-723 |
Image |
SSM3J56MFV,L3F
TOSHBIA
9645
0.05
IC Chip Co., Ltd.
SSM3J56MFV,L3F
TOSHI
3982
1.1425
Gallop Great Holdings (Hong Kong) Limited
SSM3J56MFV,L3F(B
TOSIBA
4197
2.235
CIS Ltd (CHECK IC SOLUTION LIMITED)
SSM3J56MFV,L3F(B
TOSIHBA
6224
3.3275
HXY Electronics (HK) Co.,Limited
SSM3J56MFVL3F
TOSHIDA
6357
4.42
Ande Electronics Co., Limited