Part Number | SSM3J321T |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Toshiba |
Description | MOSFET P-CH 20V 5.2A TSM |
Series | U-MOSV |
Packaging | |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 5.2A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 1V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | 8.1nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | 640pF @ 10V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 700mW (Ta) |
Rds On (Max) @ Id, Vgs | 46 mOhm @ 3A, 4.5V |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | TSM |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Image |
SSM3J321T
TOSHBIA
400
1.06
Gallop Great Holdings (Hong Kong) Limited
SSM3J321T
TOSHI
2500
1.8
Yingxinyuan INT'L (Group) Limited
SSM3J321T
TOSIBA
368000
2.54
Shenzhen WTX Capacitor Co., Ltd.
SSM3J321T
TOSIHBA
11400
3.28
N&S Electronic Co., Limited
SSM3J321T(TE85L
TOSHIDA
161000
4.02
CIS Ltd (CHECK IC SOLUTION LIMITED)